Focused helium ions create ferroelectric regions in aluminum nitride for lower-power chips

Scientists at the Department of Energy’s Oak Ridge National Laboratory have shown for the first time that ferroelectricity can be directly written into aluminum nitride using a tightly focused helium ion beam at the Center for Nanophase Materials Sciences (CNMS), a DOE Office of Science user facility at ORNL. Ferroelectric devices don’t need constant power to store data, which allows for devices that are more reliable and less power consuming than what’s currently available.