A silicon carbide transistor that operates at 600°C

For more than two decades, silicon carbide (SiC) has been promoted as the key to developing extreme-environment electronics. Yet despite its promise, the field has remained stuck at the stage of basic research, failing to result in the development of practical devices. Now, a team of researchers at Kyoto University has set out to change that. “We believe the lack of development is because the research community has been trying to apply silicon-era thinking to a fundamentally different material,” says Mitsuaki Kaneko first author of a new study published in APL Electronic Devices.