Heat-resistant silicon carbide transistors fabricated on 6-inch wafers, moving closer to practical circuits

While silicon carbide (SiC) has long been promoted as a key to developing electronics for extreme environments, the field has been stuck in the lab. Now, a team of researchers focusing on junction field-effect transistors, or JFETs, has developed a new SiC transistor structure that can operate at 600°C (1,112°F), Kyoto University recently announced.