Engineered atomic interface opens a new path for atomically thin transistors

For more than 10 years, atomically thin semiconductors have been considered among the most promising alternatives to silicon. Only a single atom thick, these materials possess strong electrical characteristics and could facilitate the development of faster, smaller and more energy-efficient transistors that surpass the limits of current chip technology. However, despite significant advances in discovering new two-dimensional semiconductors, one persistent engineering obstacle continues to hinder progress.