Quantum-tunneling field-effect transistor overcomes barriers to integrated-circuit chip development

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Quantum-tunneling field-effect transistor overcomes barriers to integrated-circuit chip development

The next generation of microelectronics relies on radical improvements in transistor switching performance to advance computing power. However, conventional semiconductor technology has hit a physical limit known as the “Boltzmann tyranny,” which restricts the energy efficiency of traditional transistors and stalls progress in high-performance electronics.


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